| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_88fc7f9eb617072238851d46591a0c76 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2201-0292
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-012
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-48464
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B2207-07 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B7-007
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81C1-00301
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N27-128
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B81B3-0081 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81C1-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B81B7-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-20 |
| filingDate |
2016-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1dc1f5b916af2f847a03c63bf89d41f4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee021452dacb7106b9908d1c85bf6963
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_694b26cb4f3d887be03389f3727b3694
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_50cde3f6463e1fb812f3b0e00c71d142 |
| publicationDate |
2020-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I684565-B |
| titleOfInvention |
Semiconductor sensor and method of manufacturing the same |
| abstract |
A semiconductor sensor, comprising a gas-sensing device and an integrated circuit electrically connected to the gas-sensing device, is provided. The gas-sensing device includes a substrate having a sensing area and an interconnection area in the vicinity of the sensing area, an inter-metal dielectric (IMD) layer formed above the substrate in the sensing area and in the interconnection area, and nan interconnect structure formed in the interconnection area. The interconnect structure includes a tungsten layer buried in the IMD layer, wherein part of a top surface of the tungsten layer is exposed by at least a via. The interconnect structure further includes a platinum layer formed in said at least the via, wherein the platinum (Pt) layer directly contacts the top surface of the tungsten layer. |
| priorityDate |
2016-08-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |