| abstract |
A method of forming nanosheet and nanowire transistors includes the formation of alternating epitaxial layers of silicon germanium (SiGe) and silicon (Si), where the germanium content within respective layers of the silicon germanium is systemically varied in order to mediate the selective etching of these layers. The germanium content can be controlled such that recessed regions created by partial removal of the silicon germanium layers have uniform lateral dimensions, and the backfilling of such recessed regions with an etch selective material results in the formation of a robust etch barrier. |