| abstract |
This invention relates to a semiconductor structure and a method of forming the same. The semiconductor structure includes a first substrate; a first adhesive layer disposed on the surface of the first substrate; a first buffer layer disposed on the surface of the first adhesion layer; and a first bonding layer disposed on the surface of the first buffer layer, wherein the densities of the first adhesive layer and the first buffer layer are greater than that of the first bonding layer. The first adhesion layer of the semiconductor structure has higher adhesion with the first substrate and the first buffer layer, and the first buffer layer and the first bonding layer exhibit higher adhesion, which are beneficial to improve the performance of the semiconductor structure. |