| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fffda8b59ac378c0e7cd94cdf51bbfd7 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-544
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0693
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0687
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1844
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1892
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-0735
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1896
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-035236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-03046 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0304 |
| filingDate |
2015-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5faeed7ae06a9dbc316504cf5cc5e957
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_93bd92898eadb286c682fa6c29319017
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4a973f491a9e37e0c71c48201e089f72 |
| publicationDate |
2020-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I681565-B |
| titleOfInvention |
Non-destructive wafer recycling for epitaxial lift-off thin-film device using a superlattice epitaxial layer |
| abstract |
The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer. |
| priorityDate |
2014-01-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |