http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I681445-B
Outgoing Links
Predicate | Object |
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assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8fa57e1a6fb0d708ac2c90d39b325fe8 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-268 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B23K26-53 |
filingDate | 2018-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2020-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_82f9269b0d54ee42a73961407e963d39 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e36b60fb2ea18bcabe760e0ff836338d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dfb8a0d03a068b619a0fb00ca4670a89 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa48a9ef754e4f549a5d731a4ff6cce3 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_546fdd0037e6732b555aec7be9ced455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b598afb970c89c5eff7fedabcd4fe25d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f6e8a75c4222963298eee5490783e7c7 |
publicationDate | 2020-01-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | TW-I681445-B |
titleOfInvention | Method for producing a technical mask and method for patterned material application and/or removal by means of a reusable mask |
abstract | The invention relates to a method for producing a technical mask (1) composed of a plate-shaped substrate (2), for example composed of glass, sapphire or silicon. At least one aperture of the mask (1) is produced by means of laser-induced deep netching, wherein the substrate (2) is transparent at least to the laser wavelength used during the laser-induced deep etching. For this purpose, the substrate (2), for the purpose of separating in particular closed contours (3), is modified by the pulses of the laser along predefined processing lines (4). Local interruptions of the processing lines (4) in the form of connecting webs, the so-called breakout tabs, ensure that the contours (3) to be separated are still connected to the plate-shaped substrate (2) even after the treatment with the etching solution. The plate-shaped substrate (2) pretreated in this way is treated with an etching solution, such as, for example, hydrofluoric acid (HF) or potassium hydroxide (KOH), in the subsequent step, as a result of which the non-modified regions of the substrate (2) are etched homogeneously and isotropically. The modified regions react anisotropically in relation to untreated regions of the substrate (2), such that firstly directional depressions form at the treated locations until finally the material of the substrate (2) is completely dissolved at this location. |
priorityDate | 2017-03-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.