http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I679390-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/F26B3-18
filingDate 2015-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6cb4901c23f3f92e383f3d2badcfe678
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publicationDate 2019-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I679390-B
titleOfInvention System and method for using sacrificial support material that can be removed by using hydrogen-rich plasma to dry high-aspect-ratio structure without collapse
abstract A system and method for drying a substrate including a plurality of high aspect ratio (HAR) structures includes performing at least one of wet etching and / or wet cleaning on the substrate using at least one of a wet etching solution and / or a wet cleaning solution, respectively. This is performed afterwards and without drying the substrate. The flow system between the plurality of HAR structures is replaced with a solvent containing a supporting material. After the solvent has evaporated, the support material precipitates from the solution and at least partially fills the plurality of HAR structures. The substrate is exposed to a plasma generated using a plasma gas chemical rich in hydrogen to remove the supporting material, thereby drying the substrate containing the HAR structures without damaging the plurality of HAR structures.
priorityDate 2014-10-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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