| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_1077735f6d4dd4bb75ceeb9b5b88f01c |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-38
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-168
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-162
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0048
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-425
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0045
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-322 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-039
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 |
| filingDate |
2018-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5863909ecf0b3ad755cfe9347cb30078
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_afeb6a6d80c7c45be0404abe7f9ce016 |
| publicationDate |
2019-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I678596-B |
| titleOfInvention |
Positive photoresist composition and method for forming patterned polyfluorene imide layer |
| abstract |
This creation provides a positive-type photoresist composition, which includes a cresol-type phenolic resin, a diazonaphthoquinone-based photosensitizer, and an organic solvent; based on 100 parts by weight of the cresol-type phenolic resin, the diazonaphthoquinones The amount of the photosensitizer is 40 parts by weight to 60 parts by weight. The content of free cresol in the cresol-type phenolic resin is less than 2% by weight, and the cresol-type phenolic resin is from 3.5% to 7% by weight of tetramethyl The alkaline dissolution rate of the ammonium hydroxide aqueous solution is less than 285 Angstroms / second. The positive photoresist composition of this creation has excellent chemical resistance to polyimide stripping agents, and can specifically improve the protective ability of the photoresist layer to a low dielectric polyimide layer, thereby optimizing the patterned polymer. Process and quality of 醯 imine layer. |
| priorityDate |
2018-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |