| abstract |
The present invention provides a chemical mechanical planarization (CMP) formulation that provides copper or through silicon vias (TSVs) for wide or advanced nodes with high and adjustable Cu removal rates and low copper surface depressions. The CMP composition provides selectivity of high Cu films to other barrier layers, such as Ta, TaN, Ti, and TiN; and dielectric films such as TEOS, low-k, and ultra-low-k films. The CMP grinding formulation comprises a solvent, an abrasive, and at least three chelating agents selected from the group consisting of amino acids, amino acid derivatives, organic amines, and combinations thereof, wherein the at least one chelating agent is an amino acid Or amino acid derivatives. Additionally, organic quaternary ammonium salts, corrosion inhibitors, oxidants, pH adjusters, and antimicrobial agents are used in the formulation. |