| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_b9a255559e1d94f20510a17a673b1078 |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-1213 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1214
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-124
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C18-1216
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4908
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G09G3-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-772 |
| filingDate |
2016-07-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_15760f35bab3ed4859fc796b2986f019
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6c7447e067070c53e45d33050fc25029
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5d0a2a510eb66ba94460591f8db830f0
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0fa377f8f10a81e62d50c1c0a19e3860
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c7218f75f670605963812ae943a0a78f
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2bbc96c0002c383b29bb721fe93bedbf
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_37fd282f81330a96c96006f5e5f408e2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_856437f2517a9043dfb64b4b324361e1 |
| publicationDate |
2019-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I677988-B |
| titleOfInvention |
Field effect transistor, display element, image display device and system |
| abstract |
A field effect transistor includes: a substrate; a passivation layer; a gate insulating layer formed between the substrate and the passivation layer; a source and a drain electrode forming contact with the gate insulating layer; A semiconductor layer formed between at least the source and the drain and in contact with the gate insulating layer, the source and the drain; and a gate in contact with the gate insulating layer and passing through the gate The gate insulation layer is to the semiconductor layer, wherein the passivation layer includes a first composite oxide, the first composite oxide includes an alkaline earth metal and a rare earth element, and wherein the gate insulation layer includes a second composite oxide The second composite oxide includes an alkaline earth metal and a rare earth element. |
| priorityDate |
2015-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |