| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_fcc0b66123940d1b32783569ebfa2d45 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7684
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09G1-04
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3212
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B24B37-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02074
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-304
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 |
| filingDate |
2018-07-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_97406910c91d515bb247f3df2dbdc85e
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7d5026400d86e5bcf8c16ef071969cc4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a5652f9d87eb7664edee7844cf1dc7f2
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dc67ca74279d55de340f60183488b3bb
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0062fbb062498984478f3e856e4d59fe
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_35bad0b77e5721fffaeb969a76668456 |
| publicationDate |
2019-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I677914-B |
| titleOfInvention |
Composition for semiconductor processing and semiconductor processing method |
| abstract |
The present invention provides a semiconductor processing composition and a processing method using the same that can suppress damage caused by corrosion to a processed object containing tungsten-containing wiring and the like, and efficiently remove contamination from the surface of the processed object. The processing method of the present invention includes the steps of: after chemically and mechanically polishing a wiring substrate containing tungsten as a wiring material by using a composition containing iron ions and a peroxide, the semiconductor processing composition is used for processing, The composition contains a compound (A) having at least one group selected from the group consisting of a tertiary amine group and a salt thereof, and a water-soluble compound (B) having a solubility parameter of 10 or more, and the pH is 2 ~ 7. |
| priorityDate |
2017-08-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |