| abstract |
The half-bridge power conversion circuit based on gallium nitride (GaN) uses control, support and logic functions. These functions are monolithically integrated on the same device as the power transistor. In some embodiments, a low-side GaN device is in communication with a high-side GaN device through one or more level shift circuits. Both the high-side device and the low-side device may have one or more integrated control, support, and logic functions. Some devices use electrostatic discharge circuits and features formed within these GaN-based devices to improve the reliability and performance of these half-bridge power conversion circuits. |