| abstract |
An abrasive contains water, tetravalent metal hydroxide particles, and an additive, and the additive includes at least one of a cationic polymer and a polysaccharide. In the CMP technology for planarizing an insulating film, the abrasive of the present invention can polish the insulating film at high speed and with less grinding scratches, and the abrasive of the present invention has a high polishing speed for the silicon oxide film and the blocking film. ratio. In addition, the present invention is an abrasive set when the abrasive is stored, and a substrate polishing method using the abrasive. |