| abstract |
A composite substrate is provided, comprising: a single-crystal silicon carbide film (11) having a thickness of 1 μm or less; and a heat-resistant material having a heat-resistant temperature of 1100 ° C. or more (except for single-crystal silicon carbide) supported by the single-crystal silicon carbide film (11). ) Formed operating substrate (12); and is provided between the above-mentioned single-crystal silicon carbide film (11) and the operating substrate (12), from silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, zirconia At least one material selected from silicon, silicon and silicon carbide, or at least one metal material selected from Ti, Au, Ag, Cu, Ni, Co, Fe, Cr, Zr, Mo, Ta, and W The interlayer (13) has a thickness of 1 μm or less. The composite substrate of the present invention can produce a nano carbon film with few defects at low cost. |