| abstract |
The present invention provides a high-sensitivity photoresist material exposed by using high-energy rays, especially EUV, a pattern forming method using the photoresist material, a polymer that becomes a base resin of the photoresist material, and a polymer that can be used as the polymer. Polymerizable monomers used as raw materials. A polymerizable monomer represented by the following formula (A). In the formula, R A is a hydrogen atom, a methyl group, or a trifluoromethyl group. X 1 is a single bond, an ether bond, an ester bond, or an amidine bond. R a is a monovalent hydrocarbon group having 1 to 20 carbon atoms. When two or more R a are present, two adjacent R a may also be bonded to each other and form an alicyclic structure with the carbon atoms to which they are bonded. The methylene group constituting the monovalent hydrocarbon group may be substituted with an ether bond or a carbonyl group. R b is a hydrogen atom or an acid labile group. X is a halogen atom. n and m are integers conforming to 1 ≦ n ≦ 4, 0 ≦ m ≦ 3, and 1 ≦ n + m ≦ 4. |