| abstract |
The method for forming a thin film of the present invention includes a first step and a second step; the first step is to set the temperature of a film-forming object to 200 ° C or higher, and change from a first state to a second state; the first state , The film-forming material and a carrier gas are supplied to the film-forming object, and the film-forming material is attached to the film-forming object; the second state is the removal of the film-forming material supplied from the first state; In the second step, the temperature of the film formation object is set to 200 ° C or higher, and the third state is changed to the fourth state; the third state is to supply hydrogen and a carrier gas to the film formation object to reduce the film formation material; In the fourth state, the supplied hydrogen is removed from the third state. The film-forming material is any one selected from the group consisting of Al (C x H 2x + 1 ) 3 , Al (C x H 2x + 1 ) 2 H, Al (C x H 2x + 1 ) 2 Cl . By repeating the first step and the second step alternately, an aluminum carbide film having a content ratio of aluminum atoms of 20 atomic% or more can be formed on the surface of the film formation object. |