http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I670859-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2029-42388 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78693 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0657 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42384 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-40 |
| filingDate | 2014-10-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 |
| publicationDate | 2019-09-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I670859-B |
| titleOfInvention | Semiconductor device |
| abstract | The present invention provides a semiconductor device having good electrical characteristics. In a cross section in the channel width direction of the semiconductor layer, the semiconductor layer includes: a first region located at one side of the semiconductor layer and having one end in contact with the insulating layer; and an upper portion of the semiconductor layer and one end portion and the first region a second region in contact with the other end; and a third region located on the other side of the semiconductor layer and having one end in contact with the other end of the second region and the other end in contact with the insulating layer, the three The region is in contact with the gate insulating film, and the interface between the gate insulating film and the gate insulating film in the second region has a region having a radius of curvature R1 and a region having a radius of curvature R2 from one end to the other end. The convex shape of the region having the radius of curvature R3, R2 is larger than R1 and R3. |
| priorityDate | 2013-10-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 79.