| abstract |
This article proposes an oxide semiconductor film with relatively stable conductivity. In addition, by using the oxide semiconductor film, a semiconductor device having stable electrical characteristics and high reliability is provided. The oxide semiconductor film includes a crystalline region, and the crystalline region includes crystals in which the ab surface is substantially parallel to one surface of the film and the c axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable conductivity and is related to visible light, Ultraviolet light and the like are more electrically stable. By using such an oxide semiconductor film as a transistor, a highly reliable semiconductor device having stable electrical characteristics can be provided. |