http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I668730-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02057 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66636 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 |
| filingDate | 2017-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_91c3947314ae32f0b183ab200f886aac http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_677a21db4f7f686498c3a92f526d4be0 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_08cc70664950b9323ac87a7c17336a8b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fc574a7ca258e5e3ab14044cf9e169b5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_36a3225c62fad4385177028d1bf7fc89 |
| publicationDate | 2019-08-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I668730-B |
| titleOfInvention | Integrated system and method for source/drain engineering |
| abstract | The embodiments described herein generally provide a method of processing a substrate. In particular, the method is used to clean and etch the source / drain regions on a silicon substrate to prepare accurate Group IV source / drain growth in a semiconductor device. Advantages disclosed in this case include accurate fin size control in components such as 10nm FinFET devices and increased overall component yield. The integrated cleaning and sinking method includes: establishing a low-pressure processing environment in the processing space; and maintaining the low-pressure processing environment, while: flowing a first gas over the substrate in the processing space; depositing salt on the substrate; The processing space is heated to greater than 90 ° C; the processing space is flushed with a second inert gas; and the source / drain regions disposed on the substrate are recessed. |
| priorityDate | 2016-09-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.