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filingDate 2015-11-16-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4b583ec078cc6418a07f6cbac1aa4114
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publicationDate 2019-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I667737-B
titleOfInvention Semiconductor device manufacturing method and semiconductor device
abstract An object of the present invention is to provide a semiconductor device capable of sufficiently suppressing warpage when sealing a large-area ‧ thin substrate, and to sufficiently perform underfilling of a semiconductor device which is subjected to flip chip sealing, and without void or unfilling of the sealing layer, heat resistance can be obtained. A method of manufacturing a semiconductor device of a semiconductor device having excellent sealing performance such as moisture resistance reliability.nn n n The method for producing a semiconductor device includes: using a substrate-attached sealing material having a substrate and a thermosetting resin layer formed on one surface of the substrate, and mounting the package by flip chip mounting In the method of manufacturing a semiconductor device in which the element mounting surface of the semiconductor element mounting substrate of the semiconductor element is sealed, the sealing step includes the semiconductor element mounting substrate and the attached base under reduced pressure conditions of a vacuum of 10 kPa or less. The integration stage of the material sealing material integration and the pressurization stage of pressurizing the integrated substrate with a pressure of 0.2 MPa or more.
priorityDate 2014-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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