| abstract |
The invention relates to a method for preparing a nanobelt, which includes: providing a substrate, setting a semiconductor thin film on the substrate, setting a stripe mask module on the semiconductor thin film, having a thickness of H and a separation distance of L; and depositing a first thin film on the surface of the semiconductor thin film. Layer, the thickness D of the first thin film layer, the angle θ 1 between the deposition direction and the thickness direction of the stripe mask module, and θ 1 <tan -1 (L / H); changing the deposition direction, depositing the second thin film layer, the deposition direction and stripe Mask module thickness direction included angle θ 2 , θ 2 <tan -1 [L / (H + D)], 0 <L-Htanθ 1- (H + D) tanθ 2 <10nm, the first thin film layer and the second thin film layer Partial overlap; dry etching of the first thin film layer and the second thin film layer; etching the semiconductor thin film to obtain a nanometer band. |