http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I664734-B

Outgoing Links

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assignee http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48de1cfdc993735cdc1c82f96827b33e
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classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22858739ec5b75399ab0a0bc064167a4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a009efd35e3b9b7cda838ea92acb8466
publicationDate 2019-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I664734-B
titleOfInvention Method of manufacturing thin film transistor
abstract The invention provides a method for manufacturing a bottom-gate top-contact metal-oxide-semiconductor thin-film transistor, the method comprising:-forming a gate electrode on a substrate;-providing a gate dielectric layer covering the gate electrode;-depositing A metal oxide semiconductor layer on the gate dielectric layer;-depositing a metal layer on top of the metal oxide semiconductor layer;-patterning the metal layer to form a source contact and a drain contact, wherein patterning The metal layer includes dry-etching the metal layer; and thereafter patterning the metal oxide semiconductor layer.
priorityDate 2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 32.