Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_48de1cfdc993735cdc1c82f96827b33e http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00a421ab71bd49a451d0a49d23a082c7 http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_986d0ab29fa7910a46cd21a12d682fe4 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate |
2013-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_22858739ec5b75399ab0a0bc064167a4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a009efd35e3b9b7cda838ea92acb8466 |
publicationDate |
2019-07-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I664734-B |
titleOfInvention |
Method of manufacturing thin film transistor |
abstract |
The invention provides a method for manufacturing a bottom-gate top-contact metal-oxide-semiconductor thin-film transistor, the method comprising:-forming a gate electrode on a substrate;-providing a gate dielectric layer covering the gate electrode;-depositing A metal oxide semiconductor layer on the gate dielectric layer;-depositing a metal layer on top of the metal oxide semiconductor layer;-patterning the metal layer to form a source contact and a drain contact, wherein patterning The metal layer includes dry-etching the metal layer; and thereafter patterning the metal oxide semiconductor layer. |
priorityDate |
2012-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |