| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_268be9afa00cf55b5aa72b1612151ecb |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-636
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-633
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-631
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6572
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-82
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-6574
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K39-32
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-14665
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K30-353
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-10 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-146
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-10 |
| filingDate |
2015-07-24-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5f99a4f50adece6e1586fe8f5c24de5 |
| publicationDate |
2019-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I663743-B |
| titleOfInvention |
Photoelectric conversion element and imaging element |
| abstract |
The photoelectric conversion element of the present invention is a photoelectric conversion element in which a lower electrode, a charge blocking layer that suppresses charge injection from the lower electrode, an organic layer including the photoelectric conversion layer, and an upper electrode including a transparent electrode layer are sequentially laminated on a substrate. The photoelectric conversion layer includes an amorphous film, and has an overall composite structure of a P-type organic semiconductor and an N-type organic semiconductor including fullerene. The difference between the free potential of the photoelectric conversion layer of the overall composite structure and the electron affinity of the N-type semiconductor is 1.30 eV or more. |
| priorityDate |
2014-07-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |