| abstract |
An etch stop layer including a metal oxide, the metal oxide packagenIt includes metals selected from the group consisting of Group 4 metals of the periodic table, Group 5 metals of the periodic table, Group 6 metals of the periodic table, and yttrium. Metal oxides form a particularly thin layer that is resistant to ashing and HF exposure. Subjecting the etch stop layer to both ashing and HF etch methods to remove etch stop layers having a thickness of less than 0.3 nm, and more preferably to remove etch stop layers having a thickness of less than 0.25 nm. The etch stop layer may be thin and may have a thickness of about 0.5 nm to 2 nm. In some embodiments, the etch stop layer includes tantalum oxide (TaO). |