http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I662148-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_8cf8d77ac0eff1767b22d2fb9445b64d |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3065 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-3244 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32449 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-325 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32541 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-6715 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-01 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67017 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02274 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-67069 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B05D5-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28506 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-00 |
| filingDate | 2014-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_0f6eecaa4d4afacb7abaf20be99040ef |
| publicationDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I662148-B |
| titleOfInvention | Gas distribution member containing ruthenium and manufacturing method thereof, shower head electrode, and processing method of semiconductor substrate |
| abstract | A method of manufacturing a silicon-containing gas distribution member for a semiconductor plasma processing chamber includes forming a carbon member into an inner cavity structure of the silicon-containing gas distribution member. The method includes depositing a silicon-containing material on the formed carbon member such that the silicon-containing material forms a shell surrounding the formed carbon member. The silicon-containing shell is processed into a structure of a silicon-containing gas distribution member, wherein the processing steps form an air inlet and an air outlet, and a part of the formed carbon member is exposed in the inner region of the silicon-containing gas distribution member. The method removes the formed carbon member from the inner region of the silicon-containing gas distribution member. This step uses a gas that reacts with carbon to separate carbon atoms, thereby removing the carbon atom from the inside of the silicon-containing gas distribution member. The region removes carbon atoms, leaving a shaped cavity in the inner region of the silicon-containing gas distribution member. |
| priorityDate | 2013-02-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 40.