| abstract |
The invention provides a chemical mechanical polishing composition containing a cerium oxide abrasive, a polyhydroxy aromatic carboxylic acid, and an ionic polymer of the formula I: Wherein X 1 and X 2 , Z 1 and Z 2 , R 1 , R 2 , R 3 and R 4 and n are as defined herein, and water, and wherein the polishing composition has a pH value of about 1 to about 4.5. The present invention further provides a method for chemical mechanical polishing of a substrate using the chemical mechanical polishing composition of the present invention. The substrate usually contains silicon oxide, silicon nitride, and / or polycrystalline silicon. |