| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28562
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28568
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-53209
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76814
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76879 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 |
| filingDate |
2014-09-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbe6d4aeb68a518f0a7ef29b2a21c920
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_84922a1b9b7ed3a4d9c896e2834e4df7
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f58822eeb798b64661ca705e323e6d4a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_52798d1405eb9fd30378c34b597661a6
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c39c00bef86fa9981d10fbafeff8bd22
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ca3e4462d3981739fa6eb0e2929536b5
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7b0f05279b96341768130742ec03d63a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_437d14690895e9f410586b0516cdee8c |
| publicationDate |
2019-05-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I660429-B |
| titleOfInvention |
Method for realizing seamless cobalt gap filling |
| abstract |
Provided herein are methods for depositing a metal layer in a characteristic contour boundary of a semiconductor device. In one embodiment, a method for depositing a metal layer to form a semiconductor device is provided. The method includes performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process includes exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate; exposing the portion of the metal layer to a plasma processing process or a hydrogen annealing process; and repeatedly exposing the substrate to the deposition precursor. The gas mixture and the step of exposing the portion of the metal layer to a plasma treatment process or a hydrogen annealing process until the predetermined thickness of the metal layer is reached. |
| priorityDate |
2013-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |