| abstract |
This article discloses various examples of integrated circuit devices and methods of forming the devices. In one example, a method includes receiving a workpiece including a substrate and a device fin extending above the substrate. The device fin includes a channel region, etching a portion of the device fin adjacent to the channel region, and the etching generates a source / drain. Electrode notch and forming a dielectric barrier in the source / drain notch, cleaning the workpiece so that the bottom portion of the dielectric barrier remains in the bottom of the source / drain notch, in the source / drain notch A source / drain component is formed in the recess, so that the bottommost portion of the dielectric barrier is disposed between the source / drain component and the remaining portion of the device fin. |