http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I657161-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_bce787970b69aeb08d159e7c101c9ed7 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01J37-32091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-042 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-30 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01J37-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23F1-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-314 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-22 |
| filingDate | 2015-07-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f7aa676d2d95f80880cad8e891ec91ae http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8bbffe4dbef6680a385d52d61efa02e4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6a90fd04bd09871e0d2b239896730b1a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_157a44235e9aeb86255b4f29e6ef2543 |
| publicationDate | 2019-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I657161-B |
| titleOfInvention | Deposition of metal-doped amorphous carbon film |
| abstract | Embodiments of the present disclosure are directed to a metal-doped amorphous carbon hard mask for etching a lower layer, a laminate, or a structure. In one embodiment, a method of processing a substrate in a processing chamber includes exposing a substrate to a gas mixture comprising a carbon-containing precursor and a metal-containing precursor, and subjecting the carbon-containing precursor to the metal-containing precursor in the treatment Reacting in the chamber to form a metal doped carbon layer on the surface of the substrate, forming a defined through opening pattern in the doped metal carbon layer, and using the doped metal carbon layer as a mask The pattern is transferred to the underlying layer below the doped metal carbon layer. The etched hard mask using the metal doped amorphous carbon film of the present invention provides reduced compressive stress, high hardness, and thus higher etch selectivity. |
| priorityDate | 2014-07-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 172.