http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I656578-B

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filingDate 2014-07-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3edd808a38c8eb882cbbcb19bdd830
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publicationDate 2019-04-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I656578-B
titleOfInvention Semiconductor device and method of manufacturing the same
abstract One aspect of the present invention provides a method of fabricating a semiconductor device that adjusts a threshold voltage. A method of fabricating a semiconductor device, comprising: a first semiconductor; an electrode electrically connected to the first semiconductor; a gate electrode; and an electron trapping layer disposed between the gate electrode and the first semiconductor, the method comprising: The threshold voltage is raised by maintaining the potential of the gate electrode higher than the potential of the electrode for 1 second or more while performing heat treatment at 125 ° C or higher and 450 ° C or lower.
priorityDate 2013-07-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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