| abstract |
One of the objects of one embodiment of the present invention is to provide a crystalline oxide semiconductor film. One aspect of the present invention is a method for producing an oxide semiconductor film, comprising the steps of sequentially laminating a gallium atom, a zinc atom, and an oxygen by causing an ion to collide with a target containing a crystalline In-Ga-Zn oxide. a first layer of atoms, a second layer containing indium atoms and oxygen atoms, and a plate-like crystalline In-Ga-Zn oxide containing a third layer of gallium atoms, zinc atoms, and oxygen atoms; and a flat In The -Ga-Zn oxide is irregularly deposited on the substrate while maintaining crystallinity. |