| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0291
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0297
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G2310-0286 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G09G3-3677
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C19-28
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G02F1-136277 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-133
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate |
2014-02-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2019-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7fa2f1cf002f782d6fbf62e9b457795a
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d4d9be286624dc55ccecf0a4f6e26e04 |
| publicationDate |
2019-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
TW-I651839-B |
| titleOfInvention |
Semiconductor device, drive circuit and display device |
| abstract |
One aspect of the present invention can provide a semiconductor device having a high aperture ratio and including a capacitive element capable of increasing a charge capacity. One aspect of the present invention can provide a semiconductor device that realizes a narrower frame. One aspect of the present invention is a semiconductor device including: a transistor on a substrate; a first conductive film formed on the same surface as a gate electrode of the transistor; and a first electrode formed on the same surface as a pair of electrodes of the transistor. Two conductive films; and a first light-transmitting conductive film electrically connected to the first conductive film and the second conductive film, wherein the second conductive film overlaps the first conductive film through the gate insulating film of the transistor. |
| priorityDate |
2013-02-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |