http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I651807-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d80f1040809503e54509c871ba828f75 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76882 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76883 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76843 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76876 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2855 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-3205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-285 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2015-05-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_dd3f80b5537e8ab56c35c6e87c990faf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d1216cd9e0b6675edb9350f77f7921df http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3ab61bf172fcf92ec0528fe1dc8bf223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c038dd29bec0cf2c4a9e21ee9b8a2317 |
| publicationDate | 2019-02-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I651807-B |
| titleOfInvention | Cu wiring manufacturing method |
| abstract | An object of the present invention is to provide a method for producing a Cu wiring, which can suppress formation of a Cu block at the bottom of a trench and suppress a defect in landfill.nn n n A protective film is formed on a substrate having an interlayer insulating film (a trench having a predetermined pattern formed on the surface thereof), a Ru film is formed by CVD, and a Cu film is formed thereon to fill the trench to manufacture a Cu wiring; in forming a Cu film In the case of using the iPVD device, the formed Cu film or the Cu alloy film is subjected to the conditions of re-sputtering by the action of ions of the plasma generating gas, and the formed Cu film or Cu is formed. The alloy film is resputtered to form a Cu film at a corner portion of the bottom portion of the trench, and secondly, a Cu film is formed in a field portion of the substrate, and a Cu film in the field portion is formed by ions of a plasma. The conditions of melting into the trench are used to fill the Cu film in the trench. |
| priorityDate | 2014-05-16-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.