| abstract |
The present invention relates to a semiconductor device and a method for manufacturing a semiconductor device, and the object thereof is to improve the characteristics of the semiconductor device.nn n n The solution is to have a channel layer (CH), a barrier layer (BA) formed on the substrate (S), and a barrier layer (BA) that penetrates the opening area (OA2) to reach the channel layer (CH). A trench (T) up to the middle, and a gate electrode (GE) arranged by a gate insulating film (GI) in the trench (T), and a barrier layer formed outside the opening area (OA2) The ground of the insulating film (IF1) on (BA) constitutes a semiconductor device. In addition, the insulating film (IF1) has a layered structure of a silicon-rich silicon nitride film (IF1b) and an N-rich silicon nitride film (IF1a) located at a lower portion thereof. In this way, by using the upper layer of the insulating film (IF1) as the Si-rich silicon nitride film (IF1b), it is possible to improve the withstand voltage. It is also possible to improve the etching resistance. In addition, by using the lower layer of the insulating film (IF1) as the N-rich silicon nitride film (IF1a), it is possible to suppress the collapse. |