http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I650803-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1255 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1218 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-41 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2015-03-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bbc08ddc6d66d2b1382be7470af1e3cf http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_fa08dd1ce9b0d4cda7b7aef3d0448f94 |
| publicationDate | 2019-02-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I650803-B |
| titleOfInvention | Semiconductor device and method of manufacturing same |
| abstract | A semiconductor device suitable for miniaturization. A method of fabricating a semiconductor device, comprising the steps of: forming a process of a semiconductor; forming a process of forming a first conductor over the semiconductor; and performing a second process of forming the first conductor to form a conductor corresponding to the first pattern a process of forming a first insulator over the conductor having the first pattern; a process of forming an opening in the first insulator; performing a third process on the conductor having the first pattern in the opening to form the first electrode and a second electrode, and a process of exposing the semiconductor; a process of forming a second insulator over the exposed portion of the first insulator, the inner wall of the opening, and the exposed portion of the semiconductor; and a process of forming the second electrical conductor over the second insulator; And performing a fourth processing on the second electrical conductor to form a third electrode. |
| priorityDate | 2014-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 62.