| abstract |
The present invention relates to a method for removing a hard mask from a semiconductor substrate, the hard mask being mainly composed of TiN, TaN, TiNxOy, TiW, W, Ti, and an alloy of Ti and W. The method includes contacting the semiconductor substrate with a cleaning composition. The scavenging composition comprises from 0.1 wt% to 90 wt% of an oxidizing agent; from 0.0001 wt% to 50 wt% of the monocarboxylate; and a complement of 100 wt% of the remainder of the scavenging composition comprising deionized water. |