http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I647821-B

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filingDate 2017-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc6eb1706e541980e08a230d9f627f5e
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publicationDate 2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I647821-B
titleOfInvention Integrated circuit of three-dimensional memory device with layered conductor and manufacturing method thereof
abstract An integrated circuit includes a multilayer stack and extending in the multilayer stacknA plurality of layered conductors, and the plurality of layered conductors extend into a conductor layer located below the multilayer stack. The layered conductor has a bottom conductive layer that makes ohmic electrical contact with the conductive layer in the substrate, and an intermediate conductive interface layer that is positioned above the bottom conductive layer and is cushioned at a portion of a side wall of the corresponding trench. And a top conductor layer over the top conductive interface layer.
priorityDate 2017-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 35.