Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_aea8583efc4aa4e2a9706d789804d37b |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76816 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-528 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76831 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0617 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76805 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B43-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0203 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76846 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B41-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76804 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-32133 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11521 |
filingDate |
2017-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_bc6eb1706e541980e08a230d9f627f5e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_46149ea4aa2d6b674584317c1ec61258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_adc31206895b716472e07e98caa04149 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5a96b091f80b5b4f0fea96f9df0d6324 |
publicationDate |
2019-01-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
TW-I647821-B |
titleOfInvention |
Integrated circuit of three-dimensional memory device with layered conductor and manufacturing method thereof |
abstract |
An integrated circuit includes a multilayer stack and extending in the multilayer stacknA plurality of layered conductors, and the plurality of layered conductors extend into a conductor layer located below the multilayer stack. The layered conductor has a bottom conductive layer that makes ohmic electrical contact with the conductive layer in the substrate, and an intermediate conductive interface layer that is positioned above the bottom conductive layer and is cushioned at a portion of a side wall of the corresponding trench. And a top conductor layer over the top conductive interface layer. |
priorityDate |
2017-03-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |