http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I645749-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_c1755eede76ea7e719a3e0d2843cd793 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T156-1082 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y10T428-24983 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2203-063 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-0195 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K2201-09036 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-465 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K3-107 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-036 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0373 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H05K1-0298 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K1-05 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H05K3-46 |
| filingDate | 2013-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_d5cc45fe20af0e84800cb91f33914507 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5302659ae0a84048a1684855388fd2f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e471d8592d26256f32f6662832a8b88 |
| publicationDate | 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I645749-B |
| titleOfInvention | Method for manufacturing multilayer substrate, multilayer insulating film and multilayer substrate |
| abstract | The present invention provides a multilayer insulating film which can form a groove of a specific depth with high precision.nn n n The method for producing a multilayer substrate according to the present invention includes: using a multilayer insulating film 1 having a first insulating layer 2 and a second insulating layer 3 laminated on one surface of the first insulating layer 2, and second The insulating layer 3 is configured to selectively remove only the second insulating layer 3 of the first insulating layer 2 and the second insulating layer 3 when the second insulating layer 3 is partially removed, and the insulating layer can be obtained. a trench having a depth of the thickness of the second insulating layer 3 formed in the layer, and having the steps of laminating the multilayer insulating film 1 on the surface of the circuit substrate; and only the first insulating layer 2 and the second insulating layer 3 a step of selectively removing the second insulating layer 3 and partially removing the second insulating layer 3 to form a trench having a depth of the thickness of the second insulating layer 3 in the obtained insulating layer; and forming the trench formed in the insulating layer The step of forming metal wiring in the trench. |
| priorityDate | 2012-09-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 119.