| abstract |
A novel semiconductor device including a transistor and a metal film containing Cu and used for wiring, signal lines, or the like is provided. The semiconductor device includes a first wiring, a second wiring, a first transistor, and a second transistor. The first wiring is electrically connected to the source or drain of the first transistor, and the second wiring is electrically connected to the gate of the second transistor. The first wiring and the second wiring each include a Cu-X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti). The Cu-X alloy film in the first wiring is connected to the Cu-X alloy film in the second wiring. |