| abstract |
The embodiments described herein relate to a method of forming an air-gap interconnect. A metal spacer layer is conformally deposited on a substrate having a mandrel structure formed thereon. The metal spacer layer is etched to form spacer features and the mandrel structure is removed from the substrate. A variety of other dielectric deposition, patterning, and etching steps may be performed to pattern the materials present on the substrate as desired. Finally, a trench is formed between adjacent spacer features and a capping layer is deposited on the trench to form an air gap between adjacent spacer features. For packaging, the interconnect via may be provided to contact at least one of the spacer features of an adjacent air gap. |