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filingDate 2010-06-03-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_04b6b303e68592c885d1aded52c3175c
publicationDate 2018-12-21-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I645073-B
titleOfInvention Copper foil and semiconductor package substrate
abstract A copper foil for a semiconductor package substrate, which is a chromic acid treatment layer formed on a roughened surface of a copper foil (being the surface of the resin), or a coating layer composed of zinc or zinc oxide and chromium oxide, and a decane coupling agent. The layer is composed. The copper foil for a semiconductor package substrate is characterized in that the amount of Cr in the chromic acid coating layer is 25-150 μg/dm 2 and the Zn is 150 μg/dm 2 or less. The copper foil for a semiconductor package substrate contains at least one or more kinds of alkane decane and a oxo oxane having a functional group reactive with a resin as a decane coupling agent layer. A problem is to establish an electrolytic treatment technique for a copper foil which can effectively prevent circuit etching when a copper foil is laminated on a resin substrate and a circuit is soft-etched using a sulfuric acid-based etching solution.
priorityDate 2009-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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