http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I644395-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_f56b5174f7d196258707ccf1d609796e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76229 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02282 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76205 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0653 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02222 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3105 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-762 |
| filingDate | 2010-05-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c5cd36a2bc552b870abcb1d063e7911d http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4274bbaa13f35d36885ee03cddb895fc http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_6e2304cc49ed41fc8f05d2cc69d77ffc |
| publicationDate | 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I644395-B |
| titleOfInvention | Semiconductor device and method of manufacturing same |
| abstract | The present invention provides a semiconductor device including an element isolation structure that prevents adverse effects on electrical characteristics of a semiconductor element, and a method of fabricating the same. The film thickness of the ruthenium oxide film 9 remaining in the element isolation trench having a relatively narrow width is thinner than that of the ruthenium oxide film 9 remaining in the element isolation trench having a relatively wide width. The amount by which the ruthenium oxide film 9 is thinned is a laminate thickness of the ruthenium oxide film 10 (upper layer) having a higher compressive stress formed by the HDP-CVD method on the lower ruthenium oxide film 9. Finally, the compressive stress of the element isolation oxide film formed in the element isolation trench having a relatively narrow width is further improved. |
| priorityDate | 2009-05-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 27.