http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I644324-B

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http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C8-16
filingDate 2017-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_06d5d4cd8045fcaefc6e37ef7059fad6
publicationDate 2018-12-11-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I644324-B
titleOfInvention Parallel access technology via segment independent in memory segment
abstract A memory device having a plurality of sectors of a memory unit such as a ferroelectric memory unit (hybrid RAM (HRAM) unit) can provide simultaneous access to memory units in separate sectors of the memory device . A first memory unit can be activated, and a second memory unit can be determined to be independent of the first memory unit. If the second memory unit is independent of the first memory unit, the second memory unit may be activated before the operation at the first memory unit ends. The latching hardware at the memory sectors may latch the addresses at the memory sectors to allow a new address to be provided to a different sector to access the second memory unit.
priorityDate 2016-03-10-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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Total number of triples: 22.