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filingDate 2017-06-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a65d68f186a93b97f52704df5bcd0766
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publicationDate 2018-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I643359-B
titleOfInvention Light-emitting diode
abstract The invention relates to a light emitting diode, which includes: a first semiconductor layer, an active layer, and a second semiconductor layer are sequentially stacked; a metal plasma generated on a surface of the second semiconductor layer away from the active layer is generated; A first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; wherein the metal plasma generating layer includes a plurality of three-dimensional nanostructures, The three-dimensional nano-structure includes a first rectangular parallelepiped structure, a second rectangular parallelepiped structure, and a triangular prism structure, which are sequentially stacked. The width of the bottom surface of the triangular prism structure is equal to the width of the upper surface of the second rectangular parallelepiped structure and larger than the first rectangular parallelepiped structure. The width of the upper surface, the first rectangular parallelepiped structure and the triangular prism structure are all a metal layer.
priorityDate 2017-06-06-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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