| abstract |
This description relates to the field of fabricating microelectronic devices having non-planar transistors. Embodiments of the present description relate to forming a gate in a non-planar NMOS transistor, wherein an NMOS work function material, such as aluminum, titanium, and carbon, can be used in combination with a titanium-containing gate filling barrier to facilitate formation. A tungsten-containing conductive material is used in a gate electrode of the non-planar NMOS transistor gate. |