http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I642190-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1288 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1259 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41733 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2014-03-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_62bda92ebb6b753395cadcd2de2ad402 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_3bca60e11ea5cabf6bf9d4c65da0e3a6 |
| publicationDate | 2018-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I642190-B |
| titleOfInvention | Semiconductor device and method of manufacturing same |
| abstract | One of the objects of the present invention is to provide a micro-electrode having good electrical characteristics at a high yield. Further, one of the objects of the present invention is to achieve high performance, high reliability, and high productivity in a semiconductor device including the transistor. When the oxide semiconductor film is micromachined, irregularities on the side surface of the oxide semiconductor film can be suppressed by using a hard mask. Specifically, the semiconductor device includes: an oxide semiconductor film on an insulating surface; a first hard mask and a second hard mask on the oxide semiconductor film; an oxide semiconductor film and a source electrode on the first hard mask a gate electrode on the oxide semiconductor film and the second hard mask; a gate insulating film on the source electrode and the drain electrode; and a gate electrode overlapping the gate insulating film and the oxide semiconductor film, wherein The first hard mask and the second hard mask are electrically conductive. |
| priorityDate | 2013-03-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 68.