http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I642189-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78618 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-45 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 |
| filingDate | 2013-12-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_2627974b94ebbe182a376fa15d81bafd http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_9d0bf63f024929a0f7e925d4edfed33e http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_40143a9686e14e16b4343d5b5cd3cf37 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1f3edd808a38c8eb882cbbcb19bdd830 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_5563e68c7c10017c83fb15b655a22d87 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_86278739d78f82e4e8019458d88aea98 |
| publicationDate | 2018-11-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I642189-B |
| titleOfInvention | Semiconductor device and method of manufacturing the same |
| abstract | A semiconductor device having an amount of reduced oxygen vacancies in a channel formation region of an oxide semiconductor is provided. In addition, a semiconductor device including an oxide semiconductor and having improved electrical characteristics is provided. In addition, a method of manufacturing a semiconductor device is provided. Forming an oxide semiconductor film; forming a conductive film on the oxide semiconductor film while forming a low-resistance region between the oxide semiconductor film and the conductive film; processing the conductive film to form a source electrode and a drain electrode; and adding oxygen to The low-resistance region between the source electrode and the drain electrode is such that a channel formation region having a higher resistance than the low-resistance region is formed, and a first low-resistance region and a second low-resistance region are formed, wherein the channel formation region is positioned at the first Between a low resistance region and a second low resistance region. |
| priorityDate | 2012-12-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 90.