http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I640663-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_2dd9870c890413b57d9ac979e0b73322 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B9-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-36 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B9-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-36 |
| filingDate | 2017-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a25474554c026e2564b7b4a25098a8c8 |
| publicationDate | 2018-11-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I640663-B |
| titleOfInvention | Tantalum carbide crystal (4H-SiC) growth method |
| abstract | The invention provides a method for growing silicon carbide crystals (4H-SiC), which includes: preparing a mixture of polycrystalline silicon carbide and metal, and using the mixture of polycrystalline silicon carbide and metal as a raw material to grow silicon carbide crystal (4H-SiC) The polycrystalline silicon carbide and metal mixture is heated and melted, which can uniformly mix silicon and carbon, ensure the silicon content in the formed silicon carbide crystal (4H-SiC), and improve the quality of the silicon carbide crystal (4H-SiC). . |
| priorityDate | 2016-12-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 36.