| abstract |
Provided herein are methods for depositing a film comprising SiCN. Some methods involve exposing the surface of the substrate to a ruthenium precursor, wherein the ruthenium precursor is halogenated with chlorine, bromine, or iodine, and the ruthenium precursor includes a halogenated decane, a halocarbon hydride, an amine decane halide, or a carbaryl amine halide. The surface of the substrate can then be exposed to a nitrogen-containing plasma or nitrogen precursor and a densified plasma. |