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filingDate 2014-01-23-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
inventor http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_4c1abb4654607c7168977a6b8a758791
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publicationDate 2018-11-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber TW-I640037-B
titleOfInvention Laser and plasma etched wafer dicing with etch chamber shadow ring for thin film frame wafer applications
abstract This document describes masking laser and plasma etched wafer dicing that covers the integrated circuitry formed on the wafer and any bumps that provide an interface to the integrated circuitry. The semiconductor wafer is coupled to the film frame by an adhesive film. The mask is patterned by laser scribing to provide a patterned mask with a gap. The laser scribes the area of the semiconductor wafer exposed below the film layer from which the integrated circuit is formed. When the film frame is maintained at an acceptable low temperature using the chamber shadow ring, the semiconductor wafer is plasma etched through the gaps in the patterned mask, the chamber shadow ring being configured to mount and cover the frame beyond the edge of the wafer. The shadow ring can be raised and lowered, for example, on the lift pins to facilitate transfer of the wafer over the frame.
priorityDate 2013-01-25-04:00^^<http://www.w3.org/2001/XMLSchema#date>
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