http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I639192-B
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_d79a3714d75520adeea100b7ed428a77 |
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-3568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2021-3595 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N2201-12 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C30B33-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L22-20 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-322 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B29-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C30B33-02 |
| filingDate | 2016-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ee2caaa6cf005675ee354c7a2b91b059 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_461c5811ff13f37d0eb411d3a2962b11 |
| publicationDate | 2018-10-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | TW-I639192-B |
| titleOfInvention | 良 Wafer quality judgment method, 矽 wafer manufacturing method using the method, and 矽 wafer |
| abstract | Provided is a method for judging the quality of a wafer which can accurately determine whether or not a slippage occurs after heat treatment of a device fabrication process, a wafer fabrication method using the method, and a germanium wafer.nn n n It is characterized in that the concentration of precipitated oxygen and the residual oxygen concentration after heat treatment are applied to the wafer preparation process in the device wafer (step S2), and based on the obtained concentration of precipitated oxygen and residual oxygen concentration, In the component fabrication process, the critical shear stress τ cri of the slippage occurs on the germanium wafer (step S3), and the obtained critical shear stress τ cri and the thermal stress applied to the germanium wafer in the heat treatment of the device fabrication process are compared. , [tau] if the thermal stress in the critical shear stress τ cri above, the silicon wafer is determined to slip dislocation occurs in the element manufacturing process, [tau] if the thermal stress is below the critical shear stress τ cri, is determined In the component fabrication process, no slippage occurs on the wafer (step S4). |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/TW-I759237-B |
| priorityDate | 2015-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 44.